SSD15N10 15a, 100v, r ds(on) 100m n-ch enhancement mode power mosfet elektronische bauelemente 25-apr-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 252(d - pack) a c d n o p g e f h k j m b rohs compliant product a suffix of -c specifies halogen free description the SSD15N10 provide the designer with the best combination of fast switching. the to-252 package i s universally preferred for all commercial-industrial surface mount applications. the device is suited fo r charger, industrial and consumer environment. features r ds(on) Q 100m @ v gs = 10v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current t c =25c i d 15 a t c =70c 13.8 a pulsed drain current 1 i dm 60 a power dissipation t c =25c p d 44.6 w t a =25c 2 w operating junction and storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings maximum thermal resistance junction-ambient (pcb mount) 3 r ja 62.5 c / w maximum thermal resistance junction-case r jc 2.8 c / w ref. millimeter ref. millimeter min. max. min. max. a 6. 4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1. 6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0. 8 1.20 1 gate 3 source 2 drain
SSD15N10 15a, 100v, r ds(on) 100m n-ch enhancement mode power mosfet elektronische bauelemente 25-apr-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss 100 - - v v gs =0, i d =250 a gate threshold voltage v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current i dss - - 1 a v ds =80v, v gs =0 static drain-source on-resistance 2 r ds(on) - 80 100 m v gs =10v, i d =8a total gate charge 2 q g - 13 - nc i d =10a v ds =80v v gs =4.5v gate-source charge q gs - 4.6 - gate-drain (miller) change q gd - 7.6 - turn-on delay time 2 t d(on) - 14 - ns v ds =50v i d = 10a v gs =10v r l = 5 r g = 1 rise time t r - 33 - turn-off delay time t d(off) - 39 - fall time t f - 5 - input capacitance c iss - 840 - pf v gs =0 v ds =25v f=1.0mhz output capacitance c oss - 115 - reverse transfer capacitance c rss - 80 - gate resistance r g - 0.9 - f=1.0mhz source-drain diode forward on voltage 2 v sd - - 1.2 v i s =8.0a, v gs =0v notes: 1. pulse width limited by maximum junction tempera ture. 2. pulse test. 3. surface mounted on 1 in 2 copper pad of fr4 board.
SSD15N10 15a, 100v, r ds(on) 100m n-ch enhancement mode power mosfet elektronische bauelemente 25-apr-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
SSD15N10 15a, 100v, r ds(on) 100m n-ch enhancement mode power mosfet elektronische bauelemente 25-apr-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
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